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Wide-Bandgap Semiconductors for High-Power, High-Frequency, and High-Temperature Applications – 1999：VOLUME572
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The 1990s witnessed a surge in the research and development of wide-bandwidth semiconductor materials and devices, spurred by the introduction of silicon substrate SiC power-switching devices reaching beyond the theoretical limits of silicon. Still, major technological and material science barriers need to be overcome before commercial applications are feasible. These catalysts and challenges are evident in the 86 papers presented at the April 1999 meeting in San Francisco in the subject areas of: SiC devices and processing, SiC epitaxy and characterization, SiC bulk growth and characterization, GaN growth and characterization, and GaN devices and processing. Annotation c. Book News, Inc., Portland, OR (booknews.com)
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