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Doping Engineering for Device Fabrication：VOLUME912
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This collection from the April 2006 symposium presents recent advanced in doping engineering and activation technologies for integrated circuits, particularly sub-second rapid thermal processing. The 28 papers investigate co-implantation, solid phase epitaxial regrowth (sper) and strained silicon, laser annealing, modeling, and ultra-shallow junction metrology. Invited contributions discuss the integration of diffusion-less junctions in NMOS and PMOS flows, impurity solubility and redistribution due to recrystallization of preamorphized silicon, and the behavior of ion implanted silicon during ultra-high temperature annealing. Other topics include room temperature boron diffusion in amorphous silicon, the carbon co- implant with spike RTA solution for phosphorus extension, defect evolution during laser annealing, and accurate sheet resistance measurement on ultra-shallow profiles. Annotation c2007 Book News, Inc., Portland, OR (booknews.com)
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