Performance and Reliability of Semiconductor Devices：VOLUME1108

Papers from a winter 2008 symposium, held at the MRS Fall Meeting in Boston, present recent results from universities, national laboratories, and industries, concentrating on fundamental materials and device issues in performance and reliability. The section on gallium nitride electronic devices gives a detailed overview of the state of the art in high electron mobility transistor (HEMT) devices. Papers on nano-engineered devices reveal ways to modify the nanoscale specific properties of quantum dot and quantum well devices. A section on performance of semiconductor devices surveys advancements in terahertz ellipsometry, high-power multi-emitter laser bars, and thin- film transistors. A group of papers on advanced materials and devices highlights designs in ultrathin gate dielectrics for CMOS and related devices. This section also presents a report on the implementation of III-V materials as a replacement for the silicon channel in future CMOS technology. B&w images are included. Maestro is affiliated with the US Naval Research Laboratory. Annotation c2009 Book News, Inc., Portland, OR (booknews.com)