Materials scientists, silicon technologists and TCAD researchers come together in this book to share experimental results and physical models, discuss achievements and challenges, and identify key issues for future research in this field. The volume focuses on many aspects related to doping of semiconductors (Si, SiGe and Ge) for device fabrication, and explores areas for single-gate as well as multi-gate devices with planar and vertical architectures. Surface properties, coverage, bonding saturation and passivation, and annealing ambient are also discussed.
In the fall of 2004, scientists from Chicago's Field Museum conducted a biological inventory in the forests of the Comunidad Nativa Matses in the northeastern region of the Peruvian Amazon. This asses
This collection from the April 2006 symposium presents recent advanced in doping engineering and activation technologies for integrated circuits, particularly sub-second rapid thermal processing. The
