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GaN and Related Alloys：VOLUME537
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The symposium held in Boston November 30-December 4, 1998, covered the gamut of applications of gallium nitride and related alloys as semiconductors (e.g. in high-density information storage, high-power/high-temperature electronics, full-color and white lighting displays, covert undersea communications). The 149 papers treat 11 topic areas: GaN electronic and photonic devices; laser diodes and spectroscopy; growth and characterization; epitaxial lateral overgrowth and selective growth; theory, defects, transport, bandstructure; surfaces, theory, processing, devices; LEDs, UV detectors, and optical properties; electronic devices and processing; quantum dots and processing; novel growth, doping, and processing; and rare-earth doping and optical emission. Page numbers would have been useful. Annotation c. Book News, Inc., Portland, OR (booknews.com)
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