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Si Front-End Processing：Physics and Technology of Dopant-Defect Interactions III：VOLUME669
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From the April 2001 symposium come 48 papers focusing on the phenomena which control the three-dimensional dopant profile in deep submicron devices. Increasing control and understanding dopant diffusion and activation, as they are determined by interactions with defects, other atoms, and interfaces, is discussed as an important way to increasing dopant activation while decreasing junction depth. These techniques are important as device size continues to shrink. Materials scientists, silicon technologists, and technology computer aided design (TCAD) researchers present material related to future device issues, dopant profiling, dopant diffusion issues, dopant defect clustering, impurity effects, laser annealing, rapid thermal annealing, and simulation and modeling. Annotation c. Book News, Inc., Portland, OR (booknews.com)
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