納米薄膜分析基礎（簡體書）

現代科學技術（從材料科學到集成電路）已深入到納米層次。從薄膜到場效應傳感器，研究的重點是如何把尺度從微米量級減小到納米量級。納米薄膜分析一書主要研究了材料表面及從表面到幾十乃至100納米深的結構與構成。主要討論了用入射粒子和光子來量化結構并進行成分和深度分析的材料表征方法。 本書討論了通過入射光子或粒子刻蝕納米材料來表征材料的方法，入射的粒子能夠激發出可測的粒子或光子，這正是表征材料的依據，納米尺度材料分析實驗會用到大量入射粒子與待測粒子束的相互作用。其中較重要的有原子碰撞、盧瑟福背散射、離子遂道、衍射、光子吸收、輻射與非輻射陽縣躍遷以及核反應。本書詳細介紹了各種分析和掃描探針顯微技術。

Preface
1. An Overview：Concepts，Units，and the Bohr Atom
1.1 Introduction
1.2 Nomenclature
1.3 Energies，Units，and Particles
1.4 Particle-Wave Duality and Lattice Spacing
1.5 The Bohr Model
Problems
2. Atomic Collisions and Backscattering Spectrometry
2.1 Introduction
2.2 Kinematics of Elastic Collisions
2.3 Rutherford Backscattering Spectrometry
2.4 Scattering Cross Section and Impact Parameter
2.5 Central Force Scattering
2.6 Scattering Cross Section：Two-Body
2.7 Deviations from Rutherford Scattering at Low and High Energy
2.8 Low-Energy Ion Scattering
2.9 Forward Recoil Spectrometry
2.10 Center of Mass to Laboratory Transformation
Problems
3. Energy Loss of Light Ions and Backscattering Depth Profiles
3.1 Introduction
3.2 General Picture of Energy Loss and Units of Energy Loss
3.3 Energy Loss of MeV Light Ions in Solids
3.4 Energy Loss in Compounds Braggs Rule
3.5 The Energy Width in Backscattering
3.6 The Shape of the Backscattering Spectrum
3.7 Depth Profiles with Rutherford Scattering
3.8 Depth Resolution and Energy-Loss Straggling
3.9 Hydrogen and Deuterium Depth Profiles
3.10 Ranges of H and He Ions
3.11 Sputtering and Limits to Sensitivity
3.12 Summary of Scattering Relations
Problems
4. Sputter Depth Profiles and Secondary Ion Mass Spectroscopy
4.1 Introduction
4.2 Sputtering by Ion Bombardment—General Concepts
4.3 Nuclear Energy Loss
4.4 Sputtering Yield
4.5 Secondary Ion Mass Spectroscopy (SIMS)
4.6 Secondary Neutral Mass Spectroscopy (SNMS)
4.7 Preferential Sputtering and Depth Profiles
4.8 Interface Broadening and Ion Mixing
4.9 Thomas-Fermi Statistical Model of the Atom
Problems
5. Ion Channeling
5.1 Introduction
5.2 Channeling in Single Crystals
5.3 Lattice Location of Impurities in Crystals
5.4 Channeling Flux Distributions 89
5.5 Surface Interaction via a Two-Atom Model
5.6 The Surface Peak
5.7 Substrate Shadowing：Epitaxial Au on Ag(111)
5.8 Epitaxial Growth
5.9 Thin Film Analysis
Problems
6. Electron-Electron Interactions and the Depth Sensitivity of Electron Spectroscopies
6.1 Introduction
6.2 Electron Spectroscopies：Energy Analysis
6.3 Escape Depth and Detected Volume
6.4 Inelastic Electron-Electron Collisions
6.5 Electron Impact Ionization Cross Section
6.6 Plasmons
6.7 The Electron Mean Free Path
6.8 Influence of Thin Film Morphology on Electron Attenuation
6.9 Range of Electrons in Solids
6.10 Electron Energy Loss Spectroscopy (EELS)
6.11 Bremsstrahlung
Problems
7. X-ray Diffraction
7.1 Introduction
7.2 Braggs Law in Real Space
7.3 Coefficient of Thermal Expansion Measurements
7.4 Texture Measurements in Polycrystalline Thin Films
7.5 Strain Measurements in Epitaxial Layers
7.6 Crystalline Structure
7.7 Allowed Reflections and Relative Intensities
Problems
8. Electron Diffraction
8.1 Introduction
8.2 Reciprocal Space
8.3 Laue Equations
8.4 Braggs Law
8.5 Ewald Sphere Synthesis
8.6 The Electron Microscope
8.7 Indexing Diffraction Patterns
Problems
9. Photon Absorption in Solids and EXAFS
9.1 Introduction
9.2 The Schrodinger Equation
9.3 Wave Functions
9.4 Quantum Numbers，Electron Configuration,and Notation
9.5 Transition Probability
9.6 Photoelectric Effect Square-Well Approximation
9.7 Photoelectric Transition Probability for a Hydrogenic Atom
9.8 X-ray Absorption
9.9 Extended X-ray Absorption Fine Structure (EXAFS)
9.10 Time-Dependent Perturbation Theory
Problems
10. X-ray Photoelectron Spectroscopy
10.1 Introduction
10.2 Experimental Considerations
10.3 Kinetic Energy of Photoelectrons
10.4 Photoelectron Energy Spectrum
10.5 Binding Energy and Final-State Effects
10.6 Binding Energy Shifts—Chemical Shifts
10.7 Quantitative Analysis
Problems
11. Radiative Transitions and the Electron Microprobe
11.1 Introduction
11.2 Nomenclature in X-Ray Spectroscopy
11.3 Dipole Selection Rules
11.4 Electron Microprobe
11.5 Transition Rate for Spontaneous Emission
11.6 Transition Rate for Kα Emission in Ni
11.7 Electron Microprobe：Quantitative Analysis
11.8 Particle-Induced X-Ray Emission (PIXE)
11.9 Evaluation of the Transition Probability for Radiative Transitions
11.10 Calculation of the Kβ/Kα Ratio
Problems
12. Nonradiative Transitions and Auger Electron Spectroscopy
12.1 Introduction
12.2 Auger Transitions
12.3 Yield of Auger Electrons and Fluorescence Yield
12.4 Atomic Level Width and Lifetimes
12.5 Auger Electron Spectroscopy
12.6 Quantitative Analysis
12.7 Auger Depth Profiles
Problems
13. Nuclear Techniques：Activation Analysis and Prompt Radiation Analysis
13.1 Introduction
13.2 Q Values and Kinetic Energies
13.3 Radioactive Decay
13.4 Radioactive Decay Law
13.5 Radionuclide Production
13.6 Activation Analysis
13.7 Prompt Radiation Analysis
Problems
14. Scanning Probe Microscopy
14.1 Introduction
14.2 Scanning Tunneling Microscopy
14.3 Atomic Force Microscopy
Appendix 1. Km for 4He+ as Projectile and Integer Target Mass
Appendix 2. Rutherford Scattering Cross Section of the Elements for 1 MeV4Hei
Appendix 3. 4He+ Stopping Cross Sections
Appendix 4. Electron Configurations and Ionization Potentials of Atoms
Appendix 5. Atomic Scattering Factors
Appendix 6. Electron Binding Energies
Appendix 7. X-Ray Wavelengths (nm)
Appendix 8. Mass Absorption Coefficient and Densities
Appendix 9. KLL Auger Energies (eV)
Appendix 10. Table of the Elements
Appendix 11. Table of Fluoresence Yields for K，L，and M Shells
Appendix 12. Physical Constants，Conversions，and Useful Combinations
Appendix 13. Acronyms
Index