Structure and Electronic Properties of Ultrathin Dielectric Films on Silicon and Related Structures：VOLUME592

This proceedings consists of 54 papers presented at the November 1999 symposium, and deals with the thin insulators and their interfaces with silicon required by the ever-decreasing dimension in CMOS and DRAM technology. Theoretical studies of the nature of SiO 2 and its interface with silicon examine electron paramagnetic resonance for the study of defects, electron tunneling, and band alignment. A number of papers address the issue of dielectric breakdown. Another set of papers discusses the application of high-k dielectrics for thin films. Topics include the dynamics of silicon oxidation, challenges in interface trap characterization of deep sub-micron MOS devices using charge pumping techniques, and an epitaxial semiconductor-atomic superlattice. Annotation c. Book News, Inc., Portland, OR (booknews.com)