GaN and Related Alloys ― 2000：VOLUME639

Proceedings of an April 2000 symposium details advances in both the basic sciences and the technology of group-III nitride electronic and optoelectronic devices. Devices discussed include high frequency, high power, and high temperature devices, as well as light emitting diodes, laser diodes, and UV photodetectors. Challenges for the growth of the field are also discussed, including the further optimization and stabilization of growth processes, and the growth of GaInN, AlGaN, AllnN, and quaternary layers. Also covered are advanced dislocation control, models of growth kinetics, implications of piezoelectric polarization, optimization of light emission and electron transport mechanisms, and general GaN-based device processing. Annotation c. Book News, Inc., Portland, OR (booknews.com)