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GaN, AIN, InN and their Alloys：VOLUME831
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系列名：MRS Proceedings
ISBN13：9781558997790
出版社：CAMBRIDGE UNIVERSITY PRESS
作者：Edited by Christian Wetzel ; Bernard Gil ; Masaaki Kuzuhara ; Michael Manfra
出版日：2005/07/01
裝訂／頁數：平裝／784頁
版次：1
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：NT$ 1665 元優惠價
：90 折 1499 元
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A fall 2004 symposium revealed the latest developments in thin film growth, bulk growth techniques, methods to cover the full ternary and quaternary alloy ranges toward InN and AlN and their characterization, and strategies for structural defect reduction and their characterization. Also examined were ways to control p-type doping and its characterization, device and defect physics with full inclusion and control of polarization effects, physics of surfaces and interfaces, and device processing techniques. In addition, advances in MBE devices, high power electronics, RF performance of electronics, UV emitters, high-efficiency light emitters, photo and chemical sensors, and applications within the group-III nitrides were also reported. Papers from the symposium are collected here. Annotation c2005 Book News, Inc., Portland, OR (booknews.com)
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