Progress in Semiconductor Materials V：Novel Materials and Electronic and Optoelectronic Applications：VOLUME891

These proceedings of the symposium held November and December 2005 include material on interband and intersubband transitions in semiconductor, including II-V, IV, and II-VI in terms of materials and quantum structures, advances in the development of light sources, detectors, modulators and electronic materials and devices. Topics include infrared materials and devices (including IV-VI semiconductor Mid-IR lasers and Mid-IR interband cascade lasers), quantum dot structures and devices (including tunneling injection quantum-dot lasers and recent progress in wavefunction engineering of layered quantum semiconductor structures), terahertz materials and devices, nitride materials for devices (including III-V epitaxial growth for nitride devices), nanostructured semiconductors and novel materials and devices, zinc oxide materials and devices including alloys, dilute nitride and bismide semiconductors, and advanced dielectrics and silicon-based materials. Poster session papers address semiconductor materials, including quantum dots, growth and magnetism, dielectrics, dilute nitrides, and silicon-, carbon- and nano-materials. Annotation c2006 Book News, Inc., Portland, OR (booknews.com)