Si Front-End Processing：Physics and Technology of Dopant-Defect Interactions：VOLUME568

The 42 papers address the problem that ion implantation, silicidation, and annealing treatments in various ambients influence the silicon native point-defect population in characteristic ways, so that the final dopant profile of an electrical device is the result of complex interactions between dopant atoms, silicon point-defects, and the various interfaces, and even with current technology can no longer be assumed to be at equilibrium and one-dimensional. They cover ultra- shallow junctions, mechanisms of point defect interaction and diffusion, modelling, transient enhanced diffusion, surface and interface effects, two-dimensional profiling, and silicon germanium and nitrogen. Annotation c. Book News, Inc., Portland, OR (booknews.com)