Materials and Processes for Nonvolatile Memories:VOLUME997
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系列名:MRS Proceedings
ISBN13:9781558999572
出版社:CAMBRIDGE UNIVERSITY PRESS
作者:Edited by Tingkai Li ; Yoshihisa Fujisaki ; J. M. Slaughter ; Dimitris Tsoukalas
出版日:2007/11/07
裝訂/頁數:平裝/374頁
版次:1
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Papers from an April 2007 symposium report on progress in the technical development of many kinds of nonvolatile memories. Research results are presented for semiconducting and metallic nanocrystal memories, SONOS, MRAM, FeRAM, RRAM, and chalcogenide materials, polymer materials, and more recent advances in molecular memories. Areas explored include embedded flash memory and the challenges in achieving automotive- temperature operation, nano-particle nonvolatile memory devices, resistance switching nonvolatile memory devices, advances in materials and devices for capacitor-type and ferroelectric-gate memory, materials for phase-change and resistance switching memories, and progress towards magnetic memory cells integrated at the silicon device level. Li is affiliated with Sharp Laboratories of America, Inc. Annotation c2008 Book News, Inc., Portland, OR (booknews.com)
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