Power Microelectronics ─ Device and Process Technologies
商品資訊
ISBN13:9789813200241
出版社:World Scientific Pub Co Inc
作者:Yung C. Liang; Ganesh S. Samudra; Chih-fang Huang
出版日:2017/05/03
裝訂/頁數:精裝/600頁
規格:24.1cm*16.5cm*3.8cm (高/寬/厚)
版次:2
定價
:NT$ 4930 元優惠價
:90 折 4437 元
無庫存,下單後進貨(採購期約4~10個工作天)
下單可得紅利積點:133 點
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This descriptive textbook provides a clear look at the theories and process technologies necessary for understanding the modern power semiconductor devices, i.e. from the fundamentals of p-n junction electrostatics, unipolar MOSFET and superjunction structures, bipolar IGBT, to the most recent wide bandgap SiC and GaN devices. It also covers their associated semiconductor process technologies. Real examples based on actual fabricated devices, with the process steps described in clear detail are especially useful. This book is suitable for university courses on power semiconductor or power electronic devices. Device designers and researchers will also find this book a good reference in their work, especially for those focusing on the advanced device development and design aspects.
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