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Discover the nonlinear methods and tools needed to design real-world microwave circuits with this tutorial guide. Balancing theoretical background with practical tools and applications, it covers everything from the basic properties of nonlinear systems such as gain compression, intermodulation and harmonic distortion, to nonlinear circuit analysis and simulation algorithms, and state-of-the-art equivalent circuit and behavioral modeling techniques. Model formulations discussed in detail include time-domain transistor compact models and frequency-domain linear and nonlinear scattering models. Learn how to apply these tools to designing real circuits with the help of a power amplifier design example, which covers all stages from active device model extraction and the selection of bias and terminations, through to performance verification. Realistic examples, illustrative insights and clearly conveyed mathematical formalism make this an essential learning aid for both professionals

From typical metrology parameters for common wireless and microwave components to the implementation of measurement benches, this introduction to metrology contains all the key information on the subject. Using it, readers will be able to: • Interpret and measure most of the parameters described in a microwave component's datasheet • Understand the practical limitations and theoretical principles of instrument operation • Combine several instruments into measurement benches for measuring microwave and wireless quantities. Several practical examples are included, demonstrating how to measure intermodulation distortion, error vector magnitude, S-parameters and large signal waveforms. Each chapter then ends with a set of exercises, allowing readers to test their understanding of the material covered and making the book equally suited for course use and for self-study.

This book is a comprehensive exposition of FET modeling, and is a must-have resource for seasoned professionals and new graduates in the RF and microwave power amplifier design and modeling community. In it, you will find descriptions of characterization and measurement techniques, analysis methods, and the simulator implementation, model verification and validation procedures that are needed to produce a transistor model that can be used with confidence by the circuit designer. Written by semiconductor industry professionals with many years' device modeling experience in LDMOS and III-V technologies, this was the first book to address the modeling requirements specific to high-power RF transistors. A technology-independent approach is described, addressing thermal effects, scaling issues, nonlinear modeling, and in-package matching networks. These are illustrated using the current market-leading high-power RF technology, LDMOS, as well as with III-V power devices.

This book is a comprehensive exposition of FET modeling, and is a must-have resource for seasoned professionals and new graduates in the RF and microwave power amplifier design and modeling community. In it, you will find descriptions of characterization and measurement techniques, analysis methods, and the simulator implementation, model verification and validation procedures that are needed to produce a transistor model that can be used with confidence by the circuit designer. Written by semiconductor industry professionals with many years' device modeling experience in LDMOS and III-V technologies, this was the first book to address the modeling requirements specific to high-power RF transistors. A technology-independent approach is described, addressing thermal effects, scaling issues, nonlinear modeling, and in-package matching networks. These are illustrated using the current market-leading high-power RF technology, LDMOS, as well as with III-V power devices.

Achieve accurate and reliable parameter extraction using this complete survey of state-of-the-art techniques and methods. A team of experts from industry and academia provides you with insights into a range of key topics, including parasitics, intrinsic extraction, statistics, extraction uncertainty, nonlinear and DC parameters, self-heating and traps, noise, and package effects. Learn how similar approaches to parameter extraction can be applied to different technologies. A variety of real-world industrial examples and measurement results show you how the theories and methods presented can be used in practice. Whether you use transistor models for evaluation of device processing and you need to understand the methods behind the models you use, or you want to develop models for existing and new device types, this is your complete guide to parameter extraction.

Do you need to know what signal type to select for a wireless application? Quickly develop a useful expertise in digital modulation with this practical guide, based on the author's experience of over thirty years in industrial design. You will understand the physical meaning behind the mathematics of wireless signals and learn the intricacies and tradeoffs in signal selection and design. Six modulation families and twelve modulation types are covered in depth, together with a quantitative ranking of relative cost incurred to implement any of twelve modulation types. Extensive discussions of the Shannon Limit, Nyquist filtering, efficiency measures and signal-to-noise measures are provided, radio wave propagation and antennas, multiple access techniques, and signal coding principles are all covered, and spread spectrum and wireless system operation requirements are presented.