This rigorous treatment of transmission lines presents all the essential concepts in a clear and straightforward manner. Key principles are demonstrated by numerous practical worked examples and illustrations, and complex mathematics is avoided throughout. Early chapters cover pulse propagation, sinusoidal waves and coupled lines, all set within the context of a simple lossless equivalent circuit. Later chapters then develop this basic model by demonstrating the derivation of circuit parameters, and the use of Maxwell's equations to extend this theory to major transmission lines. Finally, a discussion of photonic concepts and properties provides valuable insights into the fundamental physics underpinning transmission lines. Covering DC to optical frequencies, this accessible text is an invaluable resource for students, researchers and professionals in electrical, RF and microwave engineering.
Build high-performance, spectrally clean, energy-efficient mm-wave power amplifiers and transmitters with this cutting-edge guide to designing, modeling, analysing, implementing and testing new mm-wave systems. Suitable for students, researchers and practicing engineers, this self-contained guide provides in-depth coverage of state-of-the-art semiconductor devices and technologies, linear and nonlinear power amplifier technologies, efficient power combining systems, circuit concepts, system architectures and system-on-a-chip realizations. The world's foremost experts from industry and academia cover all aspects of the design process, from device technologies to system architectures. Accompanied by numerous case studies highlighting practical design techniques, tradeoffs and pitfalls, this is a superb resource for those working with high-frequency systems.
This book is a comprehensive exposition of FET modeling, and is a must-have resource for seasoned professionals and new graduates in the RF and microwave power amplifier design and modeling community. In it, you will find descriptions of characterization and measurement techniques, analysis methods, and the simulator implementation, model verification and validation procedures that are needed to produce a transistor model that can be used with confidence by the circuit designer. Written by semiconductor industry professionals with many years' device modeling experience in LDMOS and III-V technologies, this was the first book to address the modeling requirements specific to high-power RF transistors. A technology-independent approach is described, addressing thermal effects, scaling issues, nonlinear modeling, and in-package matching networks. These are illustrated using the current market-leading high-power RF technology, LDMOS, as well as with III-V power devices.
This comprehensive, hands-on review of the most up-to-date techniques in RF and microwave measurement combines microwave circuit theory and metrology, in-depth analysis of advanced modern instrumentation, methods and systems, and practical advice for professional RF and microwave engineers and researchers. Topics covered include microwave instrumentation, such as network analyzers, real-time spectrum analyzers and microwave synthesizers; linear measurements, such as VNA calibrations, noise figure measurements, time domain reflectometry and multiport measurements; and non-linear measurements, such as load- and source-pull techniques, broadband signal measurements, and non-linear NVAs. Each technique is discussed in detail and accompanied by state-of-the-art solutions to the unique technical challenges associated with its use. With each chapter written by internationally recognised experts in the field, this is an invaluable resource for researchers and professionals involved with
Do you need to know what signal type to select for a wireless application? Quickly develop a useful expertise in digital modulation with this practical guide, based on the author's experience of over thirty years in industrial design. You will understand the physical meaning behind the mathematics of wireless signals and learn the intricacies and tradeoffs in signal selection and design. Six modulation families and twelve modulation types are covered in depth, together with a quantitative ranking of relative cost incurred to implement any of twelve modulation types. Extensive discussions of the Shannon Limit, Nyquist filtering, efficiency measures and signal-to-noise measures are provided, radio wave propagation and antennas, multiple access techniques, and signal coding principles are all covered, and spread spectrum and wireless system operation requirements are presented.
Achieve accurate and reliable parameter extraction using this complete survey of state-of-the-art techniques and methods. A team of experts from industry and academia provides you with insights into a range of key topics, including parasitics, intrinsic extraction, statistics, extraction uncertainty, nonlinear and DC parameters, self-heating and traps, noise, and package effects. Learn how similar approaches to parameter extraction can be applied to different technologies. A variety of real-world industrial examples and measurement results show you how the theories and methods presented can be used in practice. Whether you use transistor models for evaluation of device processing and you need to understand the methods behind the models you use, or you want to develop models for existing and new device types, this is your complete guide to parameter extraction.
This book is a comprehensive exposition of FET modeling, and is a must-have resource for seasoned professionals and new graduates in the RF and microwave power amplifier design and modeling community. In it, you will find descriptions of characterization and measurement techniques, analysis methods, and the simulator implementation, model verification and validation procedures that are needed to produce a transistor model that can be used with confidence by the circuit designer. Written by semiconductor industry professionals with many years' device modeling experience in LDMOS and III-V technologies, this was the first book to address the modeling requirements specific to high-power RF transistors. A technology-independent approach is described, addressing thermal effects, scaling issues, nonlinear modeling, and in-package matching networks. These are illustrated using the current market-leading high-power RF technology, LDMOS, as well as with III-V power devices.
Discover the nonlinear methods and tools needed to design real-world microwave circuits with this tutorial guide. Balancing theoretical background with practical tools and applications, it covers everything from the basic properties of nonlinear systems such as gain compression, intermodulation and harmonic distortion, to nonlinear circuit analysis and simulation algorithms, and state-of-the-art equivalent circuit and behavioral modeling techniques. Model formulations discussed in detail include time-domain transistor compact models and frequency-domain linear and nonlinear scattering models. Learn how to apply these tools to designing real circuits with the help of a power amplifier design example, which covers all stages from active device model extraction and the selection of bias and terminations, through to performance verification. Realistic examples, illustrative insights and clearly conveyed mathematical formalism make this an essential learning aid for both professionals
