Compound Semiconductor Surface Passivation and Novel Device Processing:VOLUME573
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Compound Semiconductor Surface Passivation and Novel Device Processing:VOLUME573
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Compound Semiconductor Surface Passivation and Novel Device Processing:VOLUME573

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Compound semiconductors, such as GaAs and InP, typically have relatively high surface recombination velocities compared to silicon, and are subject to disruption of the surface during device processing. These two themes formed the basis for the April 1999 symposium. The 34 papers are divided into five broad topics areas: fundamentals of surfaces and their passivation, novel approaches for surface passivation and device processing, the structural, transport and optical properties of oxides, compound semiconductor surface passivation and novel device processing, and electronic devices and processing. Annotation c. Book News, Inc., Portland, OR (booknews.com)

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