晶體生長手冊1：晶體生長及缺陷形成概論（簡體書）

《Springer手冊精選系列．晶體生長手冊（第1冊）：晶體生長及缺陷形成概論（影印版）》介紹基礎理論：生長和表徵技術綜述，表面成核工藝，溶液生長晶體的形態，生長過程中成核的層錯，缺陷形成的形態。

《晶體生長手冊1:晶體生長及缺陷形成概論(影印版)》是非常實用的跨學科工具書，可供從事或即將從事這一領域研究的專業人員參考，也可供教學人員和研究生、本科生使用。

縮略語
PartA晶體生長基礎及缺陷形成
1.晶體生長技術和表徵：綜述
1.1發展歷史
1.2晶體生長理論
1.3晶體生長技術
1.4晶體缺陷及表徵
參考文獻

2.表面成核
2.1晶體環境相平衡
2.2晶核形成及工作機理
2.3成核率
2.4飽和晶核密度
2.5在同質外延中的第二層成核
2.6異質外延中的聚集機理
2.7表面活性劑對成核的影響
2.8結論與展望
參考文獻

3.溶液中的晶體生長形態
3.1相平衡
3.2晶體的生長相理論
3.3影響晶體特性的因素
3.4表面結構
3.5晶體缺陷
3.6成核動力學：過飽和
3.7溶劑
3.8雜質
3.9其他因素
3.10晶體特性變化過程
3.11小結
3.A附錄
參考文獻

4.晶體生長過程中缺陷的生長及演變
4.1綜述
4.2包晶：
4.3條紋和生長區
4.4位錯
4.5孿晶
4.6溶液中快速生長完整晶體
參考文獻

5.沒有約束條件下的單晶生長
5.1背景
5.2光滑和粗糙的接觸面：生長機理和形態學
5.3表面微形貌
5.4多面體材料晶體的生長形貌
5.5內部形態
5.6完整單晶
參考文獻

6.熔體生長晶體期間缺陷的形成
6.1綜述
6.2點缺陷
6.3位錯
6.4第二相粒子
6.5面缺陷
6.6孿晶
6.7總結
參考文獻

4.4.2 Sources of Growth Dislocations
For topological reasons dislocation lines cannot start orend in the interior of a perfect crystal. They either formclosed loops, or they start from external and internal surfaces (e.g., grain boundaries), or from other defects witha break of the crystal lattice. In crystal growth, such defects may arise from all kinds of inclusions (e.g., foreignparticles, liquid inclusions, bubbles, solute precipitates).When inclusions are overgrown and closed by growthlayers, lattice closure errors may occur. These errors arethe origin of growth dislocations which are connectedto the growth front and propagate with it during furthergrowth.
It is a very common observation that inclusions arethe source of growth dislocations. Examples are shownin Figs. 4.3, 4.5, 4.10, etc. The appearance of dislocations behind an inclusion (viewed in the directionof growth) is correlated with its size: small inclusionsemit only a few dislocations or are often dislocationfree. Large inclusions (> 50μm) usually emit bundlesof dislocations. In some cases, however, large inclusions(several millimeters in diameter) of mother solutionswithout dislocation generation have been observed (e.g.,in the capping zone of KDP [4.84, 85]).
The generation of growth dislocations by foreignparticle inclusions has been experimentally studied byNeuroth [4.86] in crystals growing in aqueous solution (potassium alum) and in supercooled melt (benzophenone (C6H5)2CO, Tm = 48 ~C; salol C13H1003,Tm=42℃).