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To meet increasingly challenging and complex system requirements, as well as to stay cost effective, it is not enough to use one single semiconductor materials system. Major efforts have, therefore, been made to combine the low cost and well established Si-based CMOS processing attributes with the superior performance attributes of compound semiconductors (CS). Such a combination will enable performance superior to that achievable with either CS and CMOS alone, with CMOS affordability. The strong and increasing interest in GaN, GaAs, SiC and related alloys on silicon substrates indicates the worldwide importance of these materials and devices. This book represents the latest technical advancements and information on III-V materials and devices on silicon substrates from universities, national laboratories and industries worldwide. Topics include: GaN-based electronic devices and sensors on silicon; GaN-based optical devices on silicon; GaN and related alloys on silicon growth and integ

Silicon-based microelectronics has steadily improved in various performance-to-cost metrics. But after decades of processor scaling, fundamental limitations and considerable new challenges have emerge

Papers from an April 2007 symposium report on progress in the technical development of many kinds of nonvolatile memories. Research results are presented for semiconducting and metallic nanocrystal me

Symposium C, 'Thin-Film Compound Semiconductor Photovoltaics' and Symposium FF, 'Compound Semiconductors for Generating, Emitting, and Manipulating Energy - II' from the 2013 MRS Spring Meeting.