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古典詩詞的女兒-葉嘉瑩

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$800以上 (4)
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2016~2017 (1)
2016年以前 (3)
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Edited by Tingkai Li 、Yoshihisa Fujisaki 、J. M. Slaughter 、Dimitris Tsoukalas (1)
Panagiotis Dimitrakis (EDT)/ Yoshihisa Fujisaki/ Guohan Hu/ Eisuke Tokumitsu (1)
Yoshihisa Fujisaki (1)
Yoshihisa Fujisaki (EDT)/ P. Dimitrakis (EDT)/ E. Tokumitsu (EDT)/ M. N. Kozikci (EDT) (1)
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CAMBRIDGE UNIVERSITY PRESS (2)
Cambridge Univ Pr (2)

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作者:Yoshihisa Fujisaki  出版社:Cambridge Univ Pr  出版日:2009/11/17 裝訂:精裝
This third book in a series on nonvolatile memories builds on fundamental materials properties, materials integration, demonstration, and industrial devices gathered in those previous. A strong and increasing interest in nonvolatile memories, both domestic and international, indicates the worldwide importance of these materials and memory devices. The book features research on advanced flash memories, including nanoparticle floating gate FETs, MRAM, FeRAM, ReRAM and phase change RAMs, as well as memories using polymer materials. Papers from a joint session with Symposium FF, Novel Materials and Devices for Spintronics, are also included.
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作者:Panagiotis Dimitrakis (EDT); Yoshihisa Fujisaki; Guohan Hu; Eisuke Tokumitsu  出版社:Cambridge Univ Pr  出版日:2017/03/21 裝訂:精裝
Symposium M, 'Materials and Technology for Nonvolatile Memories', was held November 30-December 5 at the 2014 MRS Fall Meeting in Boston.
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Symposium E, 'Materials and Physics of Emerging Nonvolatile Memories', was held April 9-13 at the 2012 MRS Spring Meeting.
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Materials and Processes for Nonvolatile Memories:VOLUME997
90折
作者:Edited by Tingkai Li ; Yoshihisa Fujisaki ; J. M. Slaughter ; Dimitris Tsoukalas  出版社:CAMBRIDGE UNIVERSITY PRESS  出版日:2007/11/07 裝訂:平裝
Papers from an April 2007 symposium report on progress in the technical development of many kinds of nonvolatile memories. Research results are presented for semiconducting and metallic nanocrystal me
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定價:1665 元, 優惠價:9 1499

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